Infineon BSM150GB120DN2F Module

Infineon

Product Code: BSM150GB120DN2F
Brand: Infineon



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Description for Infineon BSM150GB120DN2F Module

Manufacturer:InfineonProduct Category:IGBT ModulesRoHS: Details Product:IGBT Silicon ModulesConfiguration:Half BridgeCollector- Emitter Voltage VCEO Max:1200 VCollector-Emitter Saturation Voltage:2.5 VContinuous Collector Current at 25 C:210 AGate-Emitter Leakage Current:320 nAPd - Power Dissipation:1.25 kWPackage/Case:Half Bridge2Minimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CPackaging:TrayHeight:30 mm Length:106.4 mm Technology:Si Width:61.4 mm Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:10 Subcategory:IGBTs Part # Aliases:BSM150GB120DN2HOSA1 SP000095942 BSM150GB120DN2HOSA1

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