Infineon FF1200R17KE3 Igbt Unit
Infineon
Product Code: FF1200R17KE3 Igbt
Brand: Infineon
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Description for Infineon FF1200R17KE3 Igbt Unit
anufacturer:InfineonProduct Category:IGBT ModulesRoHS:N Configuration:DualCollector- Emitter Voltage VCEO Max:1700 VCollector-Emitter Saturation Voltage:2 VContinuous Collector Current at 25 C:1600 AGate-Emitter Leakage Current:400 nAPd - Power Dissipation:5.95 kWPackage/Case:IHM130-10Minimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 125 CPackaging:TrayHeight:38 mm Length:140 mm Width:130 mm Brand:Infineon Technologies Mounting Style:SMD/SMT Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:2 Subcategory:IGBTs Part # Aliases:FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1Recommended Products For Infineon