Название продукта: Infineon BSM150GB120DN2F Module
Производитель: Infineon
Код продукта: BSM150GB120DN2F
Ключевые слова: Infineon
Infineon BSM150GB120DN2F Module
BSM150GB120DN2F
Infineon BSM150GB120DN2F
BSM150GB120DN2F Module
BSM150GB120DN2F Module
Infineon BSM150GB120DN2F
BSM150GB120DN2F Module
Module
Infineon Module
Infineon BSM150GB120DN2F Module
Module
Infineon Module
Infineon BSM150GB120DN2F
Module
BSM150GB120DN2F
Infineon Module
Module
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Manufacturer:InfineonProduct Category:IGBT ModulesRoHS: Details Product:IGBT Silicon ModulesConfiguration:Half BridgeCollector- Emitter Voltage VCEO Max:1200 VCollector-Emitter Saturation Voltage:2.5 VContinuous Collector Current at 25 C:210 AGate-Emitter Leakage Current:320 nAPd - Power Dissipation:1.25 kWPackage/Case:Half Bridge2Minimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CPackaging:TrayHeight:30 mm Length:106.4 mm Technology:Si Width:61.4 mm Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:10 Subcategory:IGBTs Part # Aliases:BSM150GB120DN2HOSA1 SP000095942 BSM150GB120DN2HOSA1