德国快速配送至全球

Infineon BSM150GB120DN2F Module


Infineon BSM150GB120DN2F   Module Image

您对制造商Infineon的产品Infineon BSM150GB120DN2F Module,代码为BSM150GB120DN2F感兴趣吗?立即联系我们获取报价。Imtek Engineering,世界上最快最可靠的工业设备供应商,将为您提供最佳报价!

Get Offer With E-Mail: info@im-tek.com
Get a offer for Infineon BSM150GB120DN2F Module from our live support team now!

Manufacturer:InfineonProduct Category:IGBT ModulesRoHS: Details Product:IGBT Silicon ModulesConfiguration:Half BridgeCollector- Emitter Voltage VCEO Max:1200 VCollector-Emitter Saturation Voltage:2.5 VContinuous Collector Current at 25 C:210 AGate-Emitter Leakage Current:320 nAPd - Power Dissipation:1.25 kWPackage/Case:Half Bridge2Minimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CPackaging:TrayHeight:30 mm Length:106.4 mm Technology:Si Width:61.4 mm Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:10 Subcategory:IGBTs Part # Aliases:BSM150GB120DN2HOSA1 SP000095942 BSM150GB120DN2HOSA1